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LBAT54CWT1 PDF预览

LBAT54CWT1

更新时间: 2024-01-07 06:16:22
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 61K
描述
Dual Series Schottky Barrier Diodes

LBAT54CWT1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.58
Is Samacsys:N配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PDSO-G3
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.225 W
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

LBAT54CWT1 数据手册

 浏览型号LBAT54CWT1的Datasheet PDF文件第2页浏览型号LBAT54CWT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Dual Series Schottky  
Barrier Diodes  
LBAT54CWT1  
3
These Schottky barrier diodes are designed for high speed switch-  
ing applications, circuit protection, and voltage clamping. Extremely  
low forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
1
2
SOT-323  
• Extremely Fast Switching Speed  
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc  
ANODE  
2
ANODE  
1
3
ORDERING INFORMATION  
CATHODE  
Device  
Package  
Shipping  
LBAT54CWT1  
SOT–323  
3000/Tape & Reel  
Preferred: devices are recommended choices for future use and best overall value.  
DEVICE MARKING  
LBAT54CWT1 = L3  
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V R  
P F  
30  
Volts  
Forward Power Dissipation  
@ T A = 25°C  
225  
1.8  
mW  
mW/°C  
mA  
Derate above 25°C  
Forward Current(DC)  
Junction Temperature  
Storage Temperature Range  
IF  
200Max  
125Max  
–55 to +150  
T J  
°C  
T stg  
°C  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)  
Characteristic  
Symbol  
V(BR)R  
CT  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I R = 10 µA)  
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)  
Reverse Leakage (V R = 25 V)  
7.6  
16  
IR  
0.5  
2.0  
0.24  
0.5  
1
µAdc  
Vdc  
Vdc  
Vdc  
Forward Voltage (I F = 0.1 mAdc)  
Forward Voltage (I F = 30 mAdc)  
Forward Voltage (I F = 100 mAdc)  
Reverse Recovery Time  
VF  
0.22  
0.41  
0.52  
VF  
VF  
trr  
5.0  
ns  
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)  
Forward Voltage (I F = 1.0 mAdc)  
Forward Voltage (I F = 10 mAdc)  
Forward Current (DC)  
VF  
VF  
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
Vdc  
Vdc  
IF  
mAdc  
mAdc  
mAdc  
Repetitive Peak Forward Current  
Non–Repetitive Peak Forward Current (t < 1.0 s)  
IFRM  
IFSM  
LBAT54CWT1–1/3  

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