LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
LBAT54ALT1G
30 VOLTS SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
3
Features
1
We declare that the material of product
compliance with RoHS requirements.
2
ORDERING INFORMATION
SOT–23 (TO–236AB)
Device
Marking
B6
Shipping
CATHODE
LBAT54ALT1G
LBAT54ALT3G
3000/Tape & Reel
10000/Tape & Reel
1
B6
3
ANODE
2
CATHODE
DEVICE MARKING
LBAT54ALT1G = B6
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating Symbol
Reverse Voltage
Max
Unit
V R
P F
30
Volts
Forward Power Dissipation
@ T A = 25°C
225
1.8
mW
mW/°C
mA
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
IF
200Max
125Max
–55 to +150
T J
°C
T stg
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V(BR)R
CT
Min
30
—
Typ
—
Max
Unit
Volts
pF
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
—
10
—
IR
—
0.5
2.0
0.24
0.5
1.0
µAdc
Vdc
Vdc
Vdc
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
VF
—
0.22
0.41
0.52
VF
—
VF
—
trr
—
—
5.0
ns
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Current (DC)
VF
VF
—
—
—
—
—
0.29
0.35
—
0.32
0.40
200
300
600
Vdc
Vdc
IF
mAdc
mAdc
mAdc
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFRM
IFSM
—
—
Rev.A 1/3