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LBAT54ALT1G PDF预览

LBAT54ALT1G

更新时间: 2024-01-03 09:39:33
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 68K
描述
Schottky Barrier Diodes

LBAT54ALT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.42
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.225 W
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

LBAT54ALT1G 数据手册

 浏览型号LBAT54ALT1G的Datasheet PDF文件第2页浏览型号LBAT54ALT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switch-  
ing applications, circuit protection, and voltage clamping. Extremely  
low forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
LBAT54ALT1  
30 VOLTS SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
• Extremely Fast Switching Speed  
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc  
3
Features  
1
Pb−Free Package May be Available. The G−Suffix Denotes a  
Pb−Free Lead Finish  
2
ORDERING INFORMATION  
SOT–23 (TO–236AB)  
Device  
Package  
SOT–23  
SOT–23  
Shipping  
CATHODE  
LBAT54ALT1  
LBAT54ALT1G  
3000/Tape & Reel  
3000/Tape & Reel  
1
3
ANODE  
2
CATHODE  
DEVICE MARKING  
LBAT54ALT1 = B6  
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)  
Rating Symbol  
Reverse Voltage  
Max  
Unit  
V R  
P F  
30  
Volts  
Forward Power Dissipation  
@ T A = 25°C  
225  
1.8  
mW  
mW/°C  
mA  
Derate above 25°C  
Forward Current(DC)  
Junction Temperature  
Storage Temperature Range  
IF  
200Max  
125Max  
–55 to +150  
T J  
°C  
T stg  
°C  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)  
Characteristic  
Symbol  
V(BR)R  
CT  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I R = 10 µA)  
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)  
Reverse Leakage (V R = 25 V)  
10  
7.6  
IR  
0.5  
2.0  
0.24  
0.5  
1.0  
µAdc  
Vdc  
Vdc  
Vdc  
Forward Voltage (I F = 0.1 mAdc)  
Forward Voltage (I F = 30 mAdc)  
Forward Voltage (I F = 100 mAdc)  
Reverse Recovery Time  
VF  
0.22  
0.41  
0.52  
VF  
VF  
trr  
5.0  
ns  
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)  
Forward Voltage (I F = 1.0 mAdc)  
Forward Voltage (I F = 10 mAdc)  
Forward Current (DC)  
VF  
VF  
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
Vdc  
Vdc  
IF  
mAdc  
mAdc  
mAdc  
Repetitive Peak Forward Current  
Non–Repetitive Peak Forward Current (t < 1.0 s)  
IFRM  
IFSM  
LBAT54ALT1-1/3  

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