Datasheet > LBAS21SLT1G

LBAS21SLT1G

更新时间： 2024-11-23 11:39:51

品牌	Logo	应用领域
乐山 - LRC		二极管开关高压
页数	文件大小	规格书
3页	59K
描述
High Voltage Switching Diode

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LBAS21SLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

High Voltage Switching Diode

LBAS21SLT1

FETURE

• Pb-Free Package is available.

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

ANODE

CATHODE

Continuous Reverse Voltage

Peak Forward Current

250

225

625

Vdc

mAdc

Peak Forward Surge Current

I _FM(surge)

CATHODE/ANODE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J, T_stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

I _R

µAdc

(V = 200Vdc)

—

0.1

(V = 200Vdc, T = 150°C)

100

Reverse Breakdown Voltage

V _(BR)

V _F

250

—

Vdc

(I = 100 µAdc)

Forward Voltage

(I = 100 mAdc)

—

1000

1250

(I = 200 mAdc)

Diode Capacitance

C _D

t _rr

—

5.0

(V = 0, f = 1.0 MHz)

Reverse Recovery Time

(I = I = 30mAdc, R = 100 Ω)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBAS21SLT1

3000/Tape&Reel

(Pb-Free)

LBAS21SLT1G

3000/Tape&Reel

LBAS21SLT1-1/3

12 3

中文翻译

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