Datasheet > LBAS21HT3G

LBAS21HT3G

更新时间： 2024-11-06 02:51:35

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		高压开关光电二极管
页数	文件大小	规格书
3页	1098K
描述
HIGH VOLTAGE SWITCHING DIODE

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中文翻译

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数据手册

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LBAS21HT3G 数据手册

LBAS21HT1G

HIGH VOLTAGE

Dimensions SOD-323

SWITCHING DIODE

We declare that the material of product compliance with

•

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

Pin Configuration

ORDERINGINFORMATION

Device

Marking

Shipping

LBAS21HT1G

3000/Tape&Reel

CATHODE

ANODE

LBAS21HT3G

10000/Tape&Reel

MAXIMUMRATINGS

Rating

Symbol

V_R

Value

250

Unit

Vdc

Continuous Reverse Voltage

Peak Forward Current

I _F

200

mAdc

Peak Forward Surge Current

I_FM(surge)

625

THERMALCHARACTERISTICS

Characteristic

Total Device Dissipation FR–5 Board,*

T_A= 25°C

Symbol

Max

Unit

200

Derate above 25°C

1.57

635

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Junction and Storage

R_θJA

T_J, T_stg

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(V_R= 200 Vdc)

Symbol

Min

Max

Unit

I_R

µAdc

–

0.1

(V_R= 200 Vdc, T_J= 150°C)

Reverse Breakdown Voltage

(I_BR= 100 µAdc)

100

V_(BR)

V_F

250

–

Vdc

Forward Voltage

(I_F= 100 mAdc)

–

1000

1250

(I_F= 200 mAdc)

_F=1mA

f = 100 MHz)

3.8

Forward resistance

_F=10mA

2.5

1.1

Ω

f = 100 MHz)

_F=100mA

1.35

Diode Capacitance

(V_R= 0, f = 1.0 MHz)

C_D

t_rr

–

5.0

Reverse Recovery Time

(I_F= I_R= 30 mAdc, R_L= 100 Ω)

Rev.A 1/3

Rev :01.06.2014

1/3

www.leiditech.com

12 3

中文翻译

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