Datasheet > LBAS170HT3G

LBAS170HT3G

更新时间： 2024-11-05 12:26:39

品牌	Logo	应用领域
乐山 - LRC		肖特基二极管开关
页数	文件大小	规格书
3页	169K
描述
SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching

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LBAS170HT3G 数据手册

LESHAN RADIO COMPANY, LTD.

SCHOTTKY BARRIER

DIODE

LBAS170HT1G

Features

• Schottky diode for high-speed switching

• Circuit protection

• Voltage clamping

• High-level detecting and mixing

SOD-323

• We declare that the material of product

compliance with RoHS requirements.

Ordering Information

CATHODE

ANODE

Device

Marking

Shipping

LBAS170HT1G

3000 Tape & Reel

10000 Tape & Reel

LBAS170HT3G

(T = 25°C unless otherwise noted)

Maximum Ratings and Thermal Characteristics

Parameter

Symbol

V_RRM

Value

Unit

Repetitive Peak Reverse Voltage

Forward Continuous Current at T_amb= 25°C

Surge Forward Current at t_p< 1s, T_amb= 25°C

Power Dissipation⁽¹⁾at T_amb= 25°C

Thermal Resistance Junction to Ambient Air⁽¹⁾

Junction Temperature

I _F

600

°C/W

°C

I_FSM

200

tot

R_θJA

T _j

650

150

Operating Temperature Range

T_op

T_S

–55 to +125

–55 to +150

°C

Storage Temperature Range

°C

Note: (1) Valid provided that electrodes are kept at ambient temperature

(T_C= 25°C unless otherwise noted)

Electrical Characteristics

Parameter

Symbol

V_(BR)R

I_R

Test Condition

Min

Typ

Max

Unit

Reverse Breakdown Voltage

Leakage Current

I_R= 10µA (pulsed)

—

V_R= 50V

V_R= 70V

—

0.1

µA

I_F= 1mA

I_F= 10mA

I_F= 15mA⁽¹⁾

—

375

705

880

410

750

1000

Forward Voltage

Capacitance

V_F

V_R= 0V

C_tot

—

1.5

f = 1MHz

Charge Carrier Lifetime

R_F

I_F= 25mA

—

100

—

Differential Forward Resistance

Note:(1) Pulse test; t_p≤ 300µs

I_E= 5mA, f = 10KH_Z

Ω

Rev.O 1/3

12 3

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