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LBAS16TT1G_15 PDF预览

LBAS16TT1G_15

更新时间: 2024-11-06 01:17:31
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 237K
描述
Silicon Switching Diode

LBAS16TT1G_15 数据手册

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LESHAN RADIO COMPANY, LTD.  
Silicon Switching Diode  
LBAS16TT1G  
S-LBAS16TT1G  
FEATURE  
z
We declare that the material of product  
compliance with RoHS requirements.  
z
S- Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable.  
o
MAXIMUM RATINGS (TA = 25 C)  
SC-89  
Symbol  
Max  
75  
Unit  
V
Rating  
Continuous Reverse Voltage  
V
R
3
CATHODE  
1
ANODE  
Recurrent Peak Forward Current  
I
200  
500  
mA  
mA  
R
Peak Forward Surge Current  
I
FM(surge)  
Pulse Width = 10 µs  
Total Power Dissipation, One Diode Loaded  
P
D
150  
1.6  
mW  
T = 25°C  
A
Derate above 25°C  
mW/°C  
Mounted on a Ceramic Substrate  
(10 x 8 x 0.6 mm)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
One Diode Loaded  
R
θ
0.625  
°C/mW  
JA  
Mounted on a Ceramic Substrate  
(10 x 8 x 0.6 mm)  
DEVICE MARKING  
LBAS16TT1G= A6  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Forward Voltage  
V
F
mV  
(I = 1.0 mA)  
715  
866  
1000  
1250  
F
(I = 10 mA)  
F
(I = 50 mA)  
F
(I = 150 mA)  
F
Reverse Current  
I
R
µA  
(V = 75 V)  
1.0  
50  
30  
R
(V = 75 V, T = 150°C)  
R
J
(V = 25 V, T = 150°C)  
R
J
Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
2.0  
pF  
ns  
PC  
V
D
Reverse Recovery Time  
t
rr  
6.0  
(I = I = 10 mA, R = 50 ) (Figure 1)  
F
R
L
Stored Charge  
(I = 10 mA to V = 6.0 V, R = 500 ) (Figure 2)  
QS  
45  
F
R
L
Forward Recovery Voltage  
(I = 10 mA, t = 20 ns) (Figure 3)  
V
FR  
1.75  
F
r
ORDERING INFORMATION  
Device  
Marking  
A6  
Shipping  
LBAS16TT1G  
S-LBAS16TT1G  
3000/Tape&Reel  
LBAS16TT3G  
A6  
10000/Tape&Reel  
S-LBAS16TT3G  
Rev.O 1/4  

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