5秒后页面跳转
LBAS16LT1 PDF预览

LBAS16LT1

更新时间: 2024-11-05 03:50:31
品牌 Logo 应用领域
乐山 - LRC 二极管开关
页数 文件大小 规格书
3页 58K
描述
Switching Diode

LBAS16LT1 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
最大非重复峰值正向电流:0.5 A元件数量:1
最高工作温度:150 °C最大重复峰值反向电压:75 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

LBAS16LT1 数据手册

 浏览型号LBAS16LT1的Datasheet PDF文件第2页浏览型号LBAS16LT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Switching Diode  
ƽ Pb-Free Package is available.  
LBAS16LT1  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
3
LBAS16LT1  
A6  
SOT-23  
3000/Tape&Reel  
A6  
(Pb-Free)  
LBAS16LT1G  
SOT-23  
3000/Tape&Reel  
1
2
MAXIMUM RATINGS  
Rating  
SOT–23  
Symbol  
Value  
Unit  
Continuous Reverse Voltage  
Peak Forward Current  
V R  
I F  
75  
Vdc  
200  
500  
mAdc  
mAdc  
3
1
Peak Forward Surge Current  
I FM(surge)  
CATHODE  
ANODE  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
mW  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
TJ , Tstg  
–55 to +150  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)  
Characteristic  
OFF CHARACTERISTICS  
Reverse Voltage Leakage Current  
(V R = 75Vdc)  
Symbol  
Min  
Max  
Unit  
I R  
µAdc  
1.0  
50  
30  
(V R = 75 Vdc, T J = 150°C)  
(V R = 25 Vdc, T J = 150°C)  
Reverse Breakdown Voltage  
(I BR = 100 µAdc)  
V (BR)  
V F  
75  
Vdc  
mV  
Forward Voltage  
(I F = 1.0 mAdc)  
715  
855  
(I F = 10 mAdc)  
(I F = 50 mAdc)  
1000  
1250  
(I F = 150 mAdc)  
Diode Capacitance  
C D  
V FR  
t rr  
–-  
2.0  
1.75  
6.0  
pF  
Vdc  
ns  
(V R = 0, f = 1.0 MHz)  
Forward Recovery Voltage  
(I F = 10 mAdc, t r = 20ns )  
Reverse Recovery Time  
(I F = I R = 10 mAdc, R L = 50 )  
Stored Charge  
Q S  
45  
pC  
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 )  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
LBAS16LT1-1/3  

与LBAS16LT1相关器件

型号 品牌 获取价格 描述 数据表
LBAS16LT1G LRC

获取价格

Switching Diode
LBAS16TT1G LRC

获取价格

Silicon Switching Diode
LBAS16TT1G_15 LRC

获取价格

Silicon Switching Diode
LBAS16TW1T1G LRC

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
LBAS16TW1T1G_15 LRC

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
LBAS16WT1 LRC

获取价格

Silicon Switching Diode
LBAS170HT1G LRC

获取价格

SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching
LBAS170HT3G LRC

获取价格

SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching
LBAS20HT1 LRC

获取价格

High Voltage Switching Diode
LBAS21CLT1G LRC

获取价格

High Voltage Switching Diode