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LBA277AT1 PDF预览

LBA277AT1

更新时间: 2024-11-05 11:39:51
品牌 Logo 应用领域
乐山 - LRC 二极管开关
页数 文件大小 规格书
3页 122K
描述
Band Switching Diode

LBA277AT1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V元件数量:1
最高工作温度:125 °C最大输出电流:0.1 A
最大重复峰值反向电压:35 V子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

LBA277AT1 数据手册

 浏览型号LBA277AT1的Datasheet PDF文件第2页浏览型号LBA277AT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Band Switching Diode  
z Applications  
LBA277AT1  
High frequency switching  
z Features  
1) Small surface mounting type.  
2) High reliability.  
1
z Construction  
Silicon epitaxial planar  
2
SOD–523  
1
2
CATHODE  
ANODE  
Device Marking  
LBA277AT1 = 1  
°
Absolute maximum ratings (TA=25 C)  
Parameter  
Symbol  
Limits  
35  
Unit  
V
DC reverse voltage  
DC forward current  
Junction temperature  
Storage temperature  
VR  
IF  
100  
125  
mA  
°
Tj  
C
°
Tstg  
-55~+125  
C
°
Electrical characteristics (TA=25 C)  
Parameter  
Symbol  
Min.  
Typ.  
Max. Unit  
Conditions  
IF=10mA  
Forwardvoltage  
VF  
IR  
1.0  
10  
V
Capacitance between terminals  
Forward operating resistance  
Reverse current  
nA  
pF  
VR=25V  
CT  
rF  
1.2  
0.9  
VR=6V, f =1MHz  
IF=2mA, f =100MHz  
LBA277AT1–1/3  

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