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LB421 PDF预览

LB421

更新时间: 2024-01-05 00:11:06
品牌 Logo 应用领域
POLYFET 晶体晶体管
页数 文件大小 规格书
2页 57K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LB421 数据手册

 浏览型号LB421的Datasheet PDF文件第2页 
polyfet rf devices  
LB421  
General Description  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Military Radios,  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
Laser Driver and others.  
SILICON GATE ENHANCEMENT MODE  
RF POWER LDMOS TRANSISTOR  
35.0Watts Push - Pull  
Package Style LB  
TM  
"Polyfet" process features  
HIGH EFFICIENCY, LINEAR  
HIGH GAIN, LOW NOISE  
ROHS COMPLIANT  
low feedback and output capacitances,  
resulting in high F transistors with high  
input impedance and high efficiency.  
t
o
25 C )  
ABSOLUTE MAXIMUM RATINGS ( T =  
Total  
Device  
Dissipation  
Junction to  
Case Thermal  
Resistance  
Maximum  
Junction  
Temperature  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Storage  
Temperature  
o
o
o
o
200  
13.5  
A
230 Watts  
0.75 C/W  
C
-65 C to 150 C  
36 V  
36 V  
20 V  
RF CHARACTERISTICS (  
35.0 WATTS OUTPUT )  
SYMBOL PARAMETER  
MIN  
13  
TYP  
MAX  
UNITS TEST CONDITIONS  
Gps  
η
Common Source Power Gain  
Idq = 0.40 A, Vds =  
V, F =  
V, F =  
V, F =  
MHz  
dB  
%
12.5  
12.5  
12.5  
500  
500  
500  
Idq =  
Drain Efficiency  
0.40  
55  
A, Vds =  
A, Vds =  
MHz  
MHz  
Idq = 0.40  
VSWR  
Load Mismatch Tolerance  
10:1  
Relative  
ELECTRICAL CHARACTERISTICS ( EACH SIDE )  
SYMBOL PARAMETER  
MIN  
36  
TYP  
MAX  
UNITS TEST CONDITIONS  
V
mA  
uA  
V
Drain Breakdown Voltage  
Ids = 25.00 mA, Vgs = 0V  
Vds =  
Bvdss  
Idss  
1.0  
Zero Bias Drain Current  
Gate Leakage Current  
12.5 V, Vgs = 0V  
Igss  
Vgs  
1
5
Vds = 0V Vgs = 30V  
Gate Bias for Drain Current  
2
Ids = 0.30 A, Vgs = Vds  
2.7  
gM  
Forward Transconductance  
Saturation Resistance  
Mho  
Vds = 10V, Vgs = 5V  
Rdson  
Ohm  
Vgs = 20V, Ids = 8.00 A  
0.28  
17.00  
80.0  
5.0  
Idsat  
Ciss  
Crss  
Coss  
Saturation Current  
Amp  
pF  
Vgs = 20V, Vds = 10V  
12.5 Vgs = 0V, F = 1 MHz  
Common Source Input Capacitance  
Common Source Feedback Capacitance  
Common Source Output Capacitance  
Vds =  
Vds =  
Vds =  
12.5 Vgs = 0V, F = 1 MHz  
pF  
12.5 Vgs = 0V, F = 1 MHz  
60.0  
pF  
REVISION 10/01/2007  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com  

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