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L9015SLT3G PDF预览

L9015SLT3G

更新时间: 2024-10-29 05:41:19
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 96K
描述
General Purpose Transistors

L9015SLT3G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.75最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):300
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

L9015SLT3G 数据手册

 浏览型号L9015SLT3G的Datasheet PDF文件第2页浏览型号L9015SLT3G的Datasheet PDF文件第3页浏览型号L9015SLT3G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
L9015XLT1G  
FEATURE  
3
ƽComplementary to L9014.  
ƽ
We declare that the material of product compliance with RoHS requirements.  
1
2
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
SOT– 23  
L9015QLT1G  
15Q  
3000/Tape&Reel  
L9015QLT3G  
L9015RLT1G  
L9015RLT3G  
15Q  
15R  
15R  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
COLLECTOR  
3
L9015SLT1G  
L9015SLT3G  
15S  
15S  
3000/Tape&Reel  
10000/Tape&Reel  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
45  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
5
V
Collector current-continuoun  
100  
mA  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board.  
PD  
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RJA  
PD  
556  
Alumina Substrate, (2) TA=25 oC  
300  
mW  
Derate above 25oC  
2.4  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
RJA  
417  
Junction and Storage Temperature  
TJ ,Tstg  
-55 to +150  
oC  
1/4  

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