Datasheet > L9015RLT11

L9015RLT11

更新时间： 2024-10-29 11:42:47

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	52K
描述
General Purpose Transistors PNP Silicon

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数据手册

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L9015RLT11 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

L9015*LT1

FEATURE

ƽComplementary to L9014.

ƽPb-Free package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

SOT– 23

L9015QLT1

15Q

3000/Tape&Reel

L9015QLT1G

(Pb-Free)

15Q

15R

15S

3000/Tape&Reel

COLLECTOR

L9015RLT11

L9015RLT1G

(Pb-Free)

L9015SLT1

L9015SLT1G

(Pb-Free)

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

Collector-Base Voltage

Emitter-Base Voltage

Collector current-continuoun

100

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board.

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_?JA

P_D

556

Alumina Substrate, (2) TA=25 ^oC

300

Derate above 25^oC

2.4

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R_?JA

417

Junction and Storage Temperature

T_J,T_stg

-55 to +150

^oC

L9015*LT1-1/3

12 3

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