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L9015QLT1 PDF预览

L9015QLT1

更新时间: 2024-10-29 11:42:47
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 52K
描述
General Purpose Transistors PNP Silicon

L9015QLT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):150最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES

L9015QLT1 数据手册

 浏览型号L9015QLT1的Datasheet PDF文件第2页浏览型号L9015QLT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
L9015*LT1  
FEATURE  
3
ƽComplementary to L9014.  
ƽPb-Free package is available.  
1
2
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
SOT– 23  
L9015QLT1  
15Q  
3000/Tape&Reel  
L9015QLT1G  
(Pb-Free)  
15Q  
15R  
15R  
15S  
15S  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
COLLECTOR  
3
L9015RLT11  
L9015RLT1G  
(Pb-Free)  
L9015SLT1  
1
L9015SLT1G  
(Pb-Free)  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
45  
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
5
V
V
Collector current-continuoun  
100  
mA  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board.  
PD  
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R?JA  
PD  
556  
Alumina Substrate, (2) TA=25 oC  
300  
mW  
Derate above 25oC  
2.4  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
R?JA  
417  
Junction and Storage Temperature  
TJ ,Tstg  
-55 to +150  
oC  
L9015*LT1-1/3  

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