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L9014RLT11 PDF预览

L9014RLT11

更新时间: 2024-10-29 11:42:47
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 51K
描述
General Purpose Transistors NPN Silicon

L9014RLT11 数据手册

 浏览型号L9014RLT11的Datasheet PDF文件第2页浏览型号L9014RLT11的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L9014*LT1  
FEATURE  
3
ƽComplementary to L9015.  
ƽPb-Free package is available.  
1
2
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
SOT– 23  
L9014QLT1  
14Q  
3000/Tape&Reel  
L9014QLT1G  
(Pb-Free)  
14Q  
14R  
14R  
14S  
14S  
14T  
14T  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
L9014RLT11  
COLLECTOR  
3
L9014RLT1G  
(Pb-Free)  
L9014SLT1  
1
L9014SLT1G  
(Pb-Free)  
BASE  
2
EMITTER  
L9014TLT11  
L9014TLT1G  
(Pb-Free)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
45  
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
5
V
V
Collector current-continuoun  
100  
mA  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board, (1)  
PD  
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
556  
JA  
©
PD  
Alumina Substrate, (2) TA=25 oC  
300  
mW  
Derate above 25oC  
2.4  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
R
417  
JA  
©
Junction and Storage Temperature  
TJ ,Tstg  
-55 to +150  
oC  
L9014*LT1-1/3  

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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 100MA I(C) | TO-92