Datasheet > L9013LT1

L9013LT1

更新时间： 2024-10-29 11:42:47

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
2页	118K
描述
General Purpose Transistors NPN Silicon

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L9013LT1 数据手册

LESHAN RADIO COMPANY, LTD.

L9013*LT1

General Purpose Transistors

NPN Silicon

COLLECTOR

BASE

SOT-23 (TO-236AB)

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector current-continuoun

500

mAdc

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

556

mW/^oC

Thermal Resistance, Junction to Ambient

^oC/W

q JA

Total Device Dissipation

P_D

Alumina Substrate, (2) TA=25 ^oC

300

2.4

417

mW/^oC

^oC/W

^oC

Derate above 25^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

qJA

Tj ,Tstg

-55 to +150

L9013QLT1=13Q

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC=1.0mA)

V(BR)CEO

V(BR)EBO

V(BR)CBO

Emitter-Base Breakdown Voltage

(IE=100mA)

Collector-Base Breakdown Voltage

(IC=100mA)

Collector Cutoff Current (VCB=35V)

Emitter Cutoff Current (VEB=4V)

ICBO

IEBO

150

L9013*LT1–1/2

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