Datasheet > L9012PLT3G

L9012PLT3G

更新时间： 2024-10-29 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
2页	55K
描述
General Purpose Transistors PNP Silicon

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L9012PLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

L9012PLT1G

Series

FEATURE

We declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L9012PLT1G

L9012PLT3G

12P

3000/Tape&Reel

10000/Tape&Reel

SOT-23 (TO-236AB)

12P

L9012QLT1G

L9012QLT3G

L9012RLT1G

L9012RLT3G

L9012SLT1G

L9012SLT3G

12Q

3000/Tape&Reel

COLLECTOR

12Q

12R

10000/Tape&Reel

3000/Tape&Reel

BASE

12R

12S

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

-20

Collector-Base Voltage

Emitter-Base Voltage

-40

-5

Collector current-continuoun

-500

mAdc

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R _{θ JA}

P_D

556

Total Device Dissipation

Alumina Substrate, (2) TA=25 ^oC

Derate above 25^oC

300

2.4

mW/^oC

^oC/W

^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

Tj ,Tstg

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS (T =25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC=-1.0mA)

V(BR)CEO

V(BR)EBO

V(BR)CBO

-20

Emitter-Base Breakdown Voltage

-5

(IE=-100

Collector-Base Breakdown Voltage

-40

(IC=-100 A)

-150

Collector Cutoff Current (VCB=-35V)

ICBO

IEBO

Emitter Cutoff Current (VBE=-4V)

Rev.O 1/2

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