Datasheet > L8768-42

L8768-42

更新时间： 2024-11-25 21:07:15

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
4页	126K
描述
Laser Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

L8768-42 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

L8768-42 数据手册

CW LASER DIODES

L8933 , L8446 , L8763 , L8828 SERIES

PRELIMINARY DATA

High optical power from a single chip

FEATURES

High optical power & high radiant flux

density(CW)

L8933 series : 0.5 W / 50 µm

L8446 series : 1 W / 100 µm

L8763 series : 1 W / 50 µm

L8828 series : 2 W / 100 µm

High stability

Long life

Compact

APPLICATIONS

Pumping source for solid state lasers

Printing

Medical instrument

Measuring instrument

Material Processing

Marking

HAMAMATSU CW laser diodes, L8933, L8446, L8763, L8828 series feature high optical power of 0.5 to 2.0 W

under CW operation. As this is single chip and single element type, emitting area is small (50 µm to 100 µm X 1

µm). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as

pumping of solid lasers, printers, medical instruments etc.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.

12 3 4

中文翻译

下载PDF

与L8768-42相关器件

型号	品牌	获取价格	描述	数据表
L8768-61	HAMAMATSU	获取价格	Laser Diode
L88016	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L8801P	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L8801PR	POLYFET	获取价格	暂无描述
L8821P	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L8828-04	HAMAMATSU	获取价格	CW LASER DIODES
L8828-06	HAMAMATSU	获取价格	CW LASER DIODES
L8828-07	HAMAMATSU	获取价格	CW LASER DIODES
L8828-41	HAMAMATSU	获取价格	CW LASER DIODES
L8828-42	HAMAMATSU	获取价格	CW LASER DIODES