Datasheet > L8550SLT1G

L8550SLT1G

更新时间： 2024-10-18 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	206K
描述
General Purpose Transistors PNP Silicon

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中文翻译

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技术参数
数据手册

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L8550SLT1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.8 A	配置：	Single
最小直流电流增益 (hFE)：	300	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

L8550SLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

L8550PLT1G

Series

FEATURE

We declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

SOT– 23

Shipping

Device

Marking

85P

3000/Tape&Reel

L8550PLT1G

85P

10000/Tape&Reel

3000/Tape&Reel

COLLECTOR

L8550PLT3G

L8550QLT1G

1YD

10000/Tape&Reel

3000/Tape&Reel

L8550QLT3G

L8550RLT1G

BASE

1YF

1YH

EMITTER

10000/Tape&Reel

3000/Tape&Reel

L8550RLT3G

L8550SLT1G

L8550SLT3G

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I_C

Value

-25

Unit

Collector-Emitter Voltage

Collector-Base voltage

Emitter-base Voltage

Collector current-continuoun

-40

-5

-800

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR- 5 Board (1)

T _A= 25 °C

Derate above 25 °C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

P_D

225

1.8

mW /°C

°C/W

R_θJA

P_D

556

Alumina Substrate, (2) T _A= 25 °C

Derate above 25 °C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

300

2.4

mW /°C

°C/W

°C

R_θJA

417

T _J, T _stg-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/4

12 3 4

中文翻译

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