Datasheet > L8550QLT1

L8550QLT1

更新时间： 2024-10-18 11:39:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
General Purpose Transistors PNP Silicon

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技术参数
数据手册

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L8550QLT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	最大集电极电流 (IC)：	0.8 A
配置：	Single	最小直流电流增益 (hFE)：	150
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

L8550QLT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

L8550*LT1

FEATURE

Pb-Free Package is available.

ORDERING INFORMATION

Device

Package

Shipping

L8550*LT1

SOT-23

3000/Tape&Reel

L8550*LT1G

(Pb-Free)

3000/Tape&Reel

SOT– 23

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I_C

Value

Unit

COLLECTOR

Collector-Emitter Voltage

Collector-Base voltage

Emitter-base Voltage

Collector current-continuoun

800

mAdc

BASE

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

EMITTER

Total Device Dissipation FR- 5 Board (1)

T _A= 25 °C

Derate above 25 °C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

P_D

225

1.8

mW /°C

°C/W

R_θJA

P_D

556

Alumina Substrate, (2) T _A= 25 °C

Derate above 25 °C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICEMARKING

300

2.4

mW /°C

°C/W

°C

R_θJA

417

T _J, T _stg-55 to +150

L8550QLT1 = 1YD L8550PLT1=85P

ELECTRICAL CHARACTERISTICS (T _A= 25 °C unless otherwise noted)

Characteristic

OFFCHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

(I _C= 1.0mA)

V _(BR)CEO

V _(BR)EBO

V _(BR)CBO

–

Emitter-Base Breakdown Voltage

(I _E= 100µA)

Collector-Base Breakdown voltage

(I _C= 100µA)

Collector Cutoff Current

(V_CB= 35 V)

–

150

CBO

Emitter Cutoff Current

I _EBO

–

(V_EB=4V)

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

L8550*LT1–1/3

12 3

中文翻译

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