Datasheet > L8550HSLT1G

L8550HSLT1G

更新时间： 2024-11-26 01:03:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	85K
描述
General Purpose Transistors PNP Silicon Epitaxial planar type.

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L8550HSLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

L8550HPLT1G

Series

PNP Silicon

FEATURE

ƽHigh current capacity in compact package.

ƽEpitaxial planar type.

ƽPNP complement: L8550H

We declare that the material of product compliance with RoHS requirements.

SOT–23

DEVICE MARKING AND ORDERING INFORMATION

COLLECTOR

Shipping

Device

Marking

3000/Tape&Reel

L8550HPLT1G

1HB

10000/Tape&Reel

3000/Tape&Reel

L8550HPLT3G

L8550HQLT1G

1HB

1HD

BASE

EMITTER

10000/Tape&Reel

3000/Tape&Reel

L8550HQLT3G

L8550HRLT1G

1HD

1HF

10000/Tape&Reel

3000/Tape&Reel

L8550HRLT3G

L8550HSLT1G

L8550HSLT3G

1HF

1HH

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_CBO

V_EBO

-25

-40

-5

-1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.A 1/3

12 3

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