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L8550HQLT1 PDF预览

L8550HQLT1

更新时间: 2024-11-25 11:39:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 52K
描述
General Purpose Transistors NPN Silicon

L8550HQLT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.79
最大集电极电流 (IC):1.5 A配置:Single
最小直流电流增益 (hFE):150最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

L8550HQLT1 数据手册

 浏览型号L8550HQLT1的Datasheet PDF文件第2页浏览型号L8550HQLT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L8550H*LT1  
FEATURE  
3
ƽHigh current capacity in compact package.  
IC =1.5A.  
1
ƽEpitaxial planar type.  
2
ƽNPN complement: L8050H  
ƽPb-Free Package is available.  
SOT–23  
DEVICE MARKING AND ORDERING INFORMATION  
COLLECTOR  
3
Shipping  
Device  
Marking  
3000/Tape&Reel  
L8550HPLT1  
1HB  
1HB  
(Pb-Free)  
1
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
L8550HPLT1G  
L8550HQLT1  
L8550HQLT1G  
BASE  
1HD  
2
EMITTER  
1HD  
(Pb-Free)  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VCEO  
VCBO  
VEBO  
25  
40  
V
V
5
V
Collector Current-continuoun  
I
C
1500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board,(1)  
P
D
T
A
=25°C  
225  
1.8  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,Junction to Ambient  
RθJ A  
556  
°C/W  
Total Device Dissipation  
Alumina Substrate,(2) TA=25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
Thermal Resistance,Junction to Ambient  
Junction and Storage Temperature  
RθJ A  
417  
°C/W  
°C  
T
j,  
T
S
t
g
-55 to +150  
Version 1.1  
L8550H*LT1-1/3  

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