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L74VHC1G03 PDF预览

L74VHC1G03

更新时间: 2024-11-11 11:35:51
品牌 Logo 应用领域
乐山 - LRC
页数 文件大小 规格书
6页 201K
描述
2-Input NAND Gate with Open Drain Output

L74VHC1G03 数据手册

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LESHAN RADIO COMPANY, LTD.  
2–Input NAND Gate with  
Open Drain Output  
L74VHC1G03  
The L74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate  
CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power  
dissipation.  
The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching  
level. This allows the L74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external  
resistor and power supply.  
The L74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.  
• High Speed: t PD = 3.6 ns (Typ) at V CC = 5 V  
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C  
• Power Down Protection Provided on Inputs  
• Pin and Function Compatible with Other Standard Logic Families  
• Chip Complexity: FETs = 62; Equivalent Gates = 16  
MARKING DIAGRAMS  
5
4
1
2
VPd  
3
SC–88A / SOT–353/SC–70  
DF SUFFIX  
Pin 1  
d = Date Code  
5
4
Figure 1. Pinout (Top View)  
VPd  
1
2
3
TSOP–5/SOT–23/SC–59  
DT SUFFIX  
Figure 2. Logic Symbol  
Pin 1  
d = Date Code  
FUNCTION TABLE  
Inputs  
Output  
PIN ASSIGNMENT  
A
L
B
L
Y
Z
L
L
L
IN B  
IN A  
1
2
3
4
5
L
H
L
GND  
OUT Y  
V CC  
H
H
H
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 5 of this data sheet.  
1/6  

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