Datasheet > L6747C

L6747C

更新时间： 2024-09-09 20:52:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		驱动光电二极管接口集成电路
页数	文件大小	规格书
15页	325K
描述
High current MOSFET driver

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中文翻译

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技术参数
数据手册

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L6747C 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-N8	JESD-609代码：	e4
湿度敏感等级：	3	端子数量：	8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SON
封装等效代码：	SOLCC8,.12,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	12 V	认证状态：	Not Qualified
子类别：	MOSFET Drivers	标称供电电压：	12 V
表面贴装：	YES	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

L6747C 数据手册

L6747C

High current MOSFET driver

Features

■ Dual MOSFET driver for synchronous rectified

converters

■ High driving current for fast external MOSFET

switching

■ High frequency operation

■ Enable pin

VFDFPN8 3x3 mm

■ Adaptive dead-time management

■ Flexible gate-drive: 5 V to 12 V compatible

regulator solutions for modern high-current CPUs

and for DC-DC conversion in general.

The L6747C embeds high-current drivers for both

high-side and low-side MOSFETS. The device

accepts a flexible power supply of 5 V to 12 V.

This allows optimization of the high-side and low-

side gate-drive voltage to maximize system

efficiency.

■ High-impedance (HiZ) management for output

stage shutdown

■ Preliminary overvoltage (OV) protection

■ VFDFPN8 3x3 mm package

Applications

Anti shoot-through management prevents the

high-side and low-side MOSFETs from

conducting simultaneously and, combined with

adaptive dead-time control, minimizes the LS

body diode conduction time.

■ High current VRM / VRD for desktop / server /

workstation CPUs

■ High current and high efficiency DC-DC

converters

The L6747C features preliminary OV protection to

protect the load from dangerous overvoltage due

to MOSFET failures at startup.

Description

The L6747C is a flexible, high-frequency dual-

driver specifically designed to drive N-channel

MOSFETs connected in synchronous-rectified

buck topology.

The driver is available in a VFDFPN8 3x3 mm

package.

Combined with ST PWM controllers, the driver

allows the implementation of complete voltage

Table 1.

Device summary

Order codes

Package

Packing

L6747C

VFDFPN8

Tube

L6747CTR

Tape and reel

April 2010

Doc ID 17127 Rev 1

1/15

www.st.com

12 3 4 5 6 7...15

中文翻译

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与L6747C相关器件

型号	品牌	获取价格	描述	数据表
L6747CTR	STMICROELECTRONICS	获取价格	High current MOSFET driver
L675	ETC	获取价格	PANEL FUSEHOLDER BARRIER & PANEL SEALED
L-675	RHOMBUS-IND	获取价格	INDUCTOR
L6750	STMICROELECTRONICS	获取价格	2 to 5 phase controller with LTB technology for VR11.x and AMD6bit CPUs featuring I2C inte
L6750TR	STMICROELECTRONICS	获取价格	2 to 5 phase controller with LTB technology for VR11.x and AMD6bit CPUs featuring I2C inte
L6751	STMICROELECTRONICS	获取价格	Digitally controlled dual PWM for Intel VR12 and AMD SVI
L6751B	STMICROELECTRONICS	获取价格	Digitally controlled dual PWM for Intel VR12 and AMD SVI
L6751BTR	STMICROELECTRONICS	获取价格	Digitally controlled dual PWM for Intel VR12 and AMD SVI
L6751C	STMICROELECTRONICS	获取价格	Digitally controlled dual PWM for Intel VR12 and AMD SVI
L6751CTR	STMICROELECTRONICS	获取价格	Digitally controlled dual PWM for Intel VR12 and AMD SVI

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