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L6440 PDF预览

L6440

更新时间: 2024-09-23 03:49:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动器消费电路商用集成电路放大器信息通信管理
页数 文件大小 规格书
3页 68K
描述
4-Channel ultra low power GMR-TMR preamplifier for HDD applications

L6440 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:DIEReach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.84
Is Samacsys:N商用集成电路类型:CONSUMER CIRCUIT
JESD-30 代码:R-XUUC-N功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.3 V表面贴装:YES
技术:BICMOS温度等级:OTHER
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

L6440 数据手册

 浏览型号L6440的Datasheet PDF文件第2页浏览型号L6440的Datasheet PDF文件第3页 
L6440  
4-Channel ultra low power GMR-TMR preamplifier  
for HDD applications  
Data Brief  
Feature summary  
Flip Chip package  
4-channel configuration  
Dual Power Supplies of +3V, +20% -10%  
and -2.1V, 6%  
Operating Temperature Range -25°C to +85°C  
Flip Chip (Bumped die)  
Supports xGMR heads from 50 to 500 Ohms  
This part is specially designed to have minimum  
dissipation in all the modes of operation (Sleep  
<200mW, Read <60mW, Write <200mW) and  
very fast Sleep to Read recovery time (S2R  
<500ns).  
and perpendicular write heads  
Data Rate up to 600Mb/s  
Sleep mode power consumption < 200µW  
Sleep-to-read recovery time < 500ns  
Read mode power consumption < 60mW  
It is designed for use with 4-terminal Giant  
Magneto Resistance / Tunnel Magneto  
(RMR=250Ohm, Ibias =400µA, NF<2dB)  
Read Bandwidth (-3dB): 50kHz - 450MHz  
Read Gain selectable from 20dB to 38dB  
Resistance read and Perpendicular write heads.  
In read mode, the device consists of a fully  
differential amplifier, offering: current or voltage  
bias, voltage-sense input, programmable input  
impedance, a wide-range read gain, low-noise  
and high-bandwidth. In write mode, it includes fast  
current switching differential write drivers, which  
support data rates up to 600 Mb/s, overshoot  
amplitude and duration programmability. In all the  
modes of operations Fly Height Control circuit is  
available. This circuit delivers an accurate  
programmable voltage or power to a resistive  
element near the write head to match write  
current induced heating and subsequent  
expansion or protrusion of the pole tip which  
effect the media spacing.  
Write mode power consumption < 200 mW @  
600Mb/s measured with single head 100%  
Write mode duty cycle, 127b PRBS,  
Iw = 40mA, OSC = 100mA (0-pk),  
OSD = 500ps (PW50), with Heater off  
Write voltage launched up to 6V differential  
Accurate Flying Height Control using voltage or  
power output  
ESD diodes for MR head protection  
Differential Current and Voltage Bias / Voltage  
Sense architecture  
Bi-directional 16-bit serial interface 2.5V and  
3.3V CMOS compatible  
The part is further comprehensive of an extensive  
analog/digital measurement scheme for the read,  
write, heater heads and die temperature, of an  
extensive fault detection and reporting scheme,  
thermal asperity detection and correction, write  
degauss function.  
Description  
The L6440 is a BICMOS Silicon Germanium  
monolithic integrated circuit differential  
preamplifier for Ultra Low Power Hard Disk Drive  
applications.  
Order code  
Part number  
Package  
Flip Chip (Bumped die)  
Operating temp. range  
L6440  
-25°C to +85°C  
July 2006  
Rev 1  
1/3  
For further information contact your local STMicroelectronics sales office.  
www.st.com  
3

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