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L566

更新时间： 2024-11-25 22:31:47
品牌 Logo 应用领域
IXYS 三相整流桥二极管
页数 文件大小 规格书
2页 56K
描述
Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

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L566 数据手册

 浏览型号L566的Datasheet PDF文件第2页 
VUE 130-12NO7  
IdAV = 130 A  
VRRM = 1200 V  
Three Phase Rectifier Bridge  
with Fast Recovery Epitaxial Diodes (FRED)  
in ECO-PAC 2  
trr  
= 40 ns  
Preliminary data sheet  
PS16  
VRSM  
V
VRRM  
V
Typ  
~ A 1  
~ L 9  
~ K10  
1200  
1200  
VUE 130-12NO7  
EG 1  
Pin arangement see outlines  
B3  
Symbol  
Conditions  
Maximum Ratings  
Features  
• Package with DCB ceramic  
base plate in low profile  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Low forward voltage drop  
• Leads suitable for PC board soldering  
IdAV  
IdAVM  
①
TC = 70°C, module  
130  
90  
A
A
IFSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
500  
525  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
415  
440  
A
A
Applications  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1250  
1160  
A2s  
A2s  
• Supplies for DC power equipment  
• Input and output rectifiers for high  
frequency  
• Battery DC power supplies  
• Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
860  
820  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VISOL  
50/60 Hz, RMS t = 1 min  
ISOL ≤ 1 mA t = 1 s  
3000  
3600  
V~  
V~  
I
• Small and light weight  
• Low noise switching  
Md  
Weight  
Mounting torque (M4)  
typ.  
1.5-2/14-18 Nm/lb.in.  
24  
g
Symbol  
IR  
Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
typ.  
max.  
VR = VRRM  
VR = VRRM  
TVJ = 25°C  
TVJ = TVJM  
1
mA  
2.5 mA  
VF  
IF = 60 A  
TVJ = 25°C  
2.7  
V
VT0  
rT  
for power-loss calculations only  
1.07  
8.2 mΩ  
V
RthJC  
RthCH  
per diode; DC current  
per diode, DC current, typ.  
0.8 K/W  
0.2 K/W  
IRM  
trr  
IF = 130 A, -diF/dt = 100 A/µs  
VR = 100 V, TVJ = 100°C  
IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C  
7
15  
A
40  
ns  
a
dS  
dA  
Max. allowable acceleration  
creeping distance on surface (pin to heatsink)  
strike distance in air  
50  
11.2  
9.7  
m/s2  
mm  
mm  
(pin to heatsink)  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
① for resistive load at bridge output.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  
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