Datasheet > L5109A

L5109A

更新时间： 2024-09-15 07:07:55

品牌	Logo	应用领域
美国国家半导体 - NSC		/
页数	文件大小	规格书
9页	657K
描述
L5109又名:LM5109，封装上丝印是L5109

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L5109A 数据手册

April 2006

LM5109A

High Voltage 1A Peak Half Bridge Gate Driver

n Bootstrap supply voltage to 108V DC

n Fast propagation times (30 ns typical)

n Drives 1000 pF load with 15ns rise and fall times

n Excellent propagation delay matching (2 ns typical)

n Supply rail under-voltage lockout

General Description

The LM5109A is a cost effective, high voltage gate driver

designed to drive both the high-side and the low-side

N-Channel MOSFETs in a synchronous buck or a half bridge

configuration. The floating high-side driver is capable of

working with rail voltages up to 90V. The outputs are inde-

pendently controlled with TTL compatible input thresholds.

The robust level shift technology operates at high speed

while consuming low power and providing clean level tran-

sitions from the control input logic to the high-side gate

driver. Under-voltage lockout is provided on both the low-

side and the high-side power rails. The device is available in

the SOIC-8 and the thermally enhanced LLP-8 packages.

n Low power consumption

n Pin compatible with ISL6700

Typical Applications

n Current Fed push-pull converters

n Half and Full Bridge power converters

n Solid state motor drives

n Two switch forward power converters

Features

Package

n Drives both a high-side and low-side N-Channel

MOSFET

n SOIC-8

n LLP-8 (4 mm x 4 mm)

n 1A peak output current (1.0A sink / 1.0A source)

Independent TTL compatible inputs

Simplified Block Diagram

20170201

FIGURE 1.

DS201702

www.national.com

12 3 4 5 6 7...9

中文翻译

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