Datasheet > L356

L356

更新时间： 2022-11-26 19:16:25

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	45K
描述
HiPerDynFRED Epitaxial Diode with soft recovery

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数据手册

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L356 数据手册

DSEP 9-06CR

HiPerDynFRED^TMEpitaxial Diode

I_FAV= 9 A

V_RRM= 600 V

t_rr= 15 ns

with soft recovery

(Electrically Isolated Back Surface)

ISOPLUS 247^TM

V_RSM

V_RRM

Type

Isolated back surface *

600

DSEP 9-06CR

A = Anode, C = Cathode

* Patent pending

Symbol

Conditions

Maximum Ratings

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

I_FRMS

I_FAVM

I_FRM

tbd

T_C= 140°C; rectangular, d = 0.5

t_P< 10 µs; rep. rating, pulse width limited by T_VJM

- Isolated mounting surface

- 2500V electrical isolation

• Lowcathodetotabcapacitance(<25pF)

• International standard package

• Planar passivated chips

• Very short recovery time

• Extremely low switching losses

• Low I_RM-values

I_FSM

E_AS

T_VJ= 45°C; t_p= 10 ms (50 Hz), sine

T_VJ= 25°C; non-repetitive

I_AS= 2 A; L = 180 µH

0.5

I_AR

V_A= 1.5·V_Rtyp.; f = 10 kHz; repetitive

0.2

T_VJ

T_VJM

T_stg

-55...+175

175

-55...+150

°C

• Soft recovery behaviour

• Epoxy meets UL 94V-0

• Isolated and UL registered E153432

P_tot

T_C= 25°C

150

2500

V_ISOL

F_C

50/60 Hz RMS; I_ISOL≤ 1 mA

mounting force with clip

typical

Applications

20...120

• Antiparallel diode for high frequency

switching devices

Weight

• Antisaturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Symbol

Conditions

Characteristic Values

typ.

max.

I_R

①

②

T_VJ= 25°C V_R= V_RRM

T_VJ= 150°C V_R= V_RRM

µA

0.2

V_F

I_F= 9 A;

T_VJ= 150°C

T_VJ= 25°C

2.9

4.0

R_thJC

R_thCH

K/W

Advantages

0.25

• Avalanche voltage rated for reliable

operation

• Soft reverse recovery for low EMI/RFI

• Low I_RMreduces:

- Power dissipation within the diode

- Turn-onlossinthecommutatingswitch

t_rr

I_F= 1 A; -di/dt = 200 A/µs;

V_R= 30 V; T_VJ= 25°C

I_RM

V_R= 100 V; I_F= 10 A; -di_F/dt = 100 A/µs

T_VJ= 100°C

3.5

4.1

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

② Pulse Width = 300 µs, Duty Cycle < 2.0 %

Dimensions see Outlines.pdf

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

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