Datasheet > L2SK3541M3T5G

L2SK3541M3T5G

更新时间： 2024-10-29 01:21:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	129K
描述
Silicon N-Channel MOSFET

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L2SK3541M3T5G 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon N-Channel MOSFET

L2SK3541MT5G

Applications

Interfacing,switching(30V,100mA)

Features

Low on-resistance

SOT-723

Fast switching speed

Low voltage drive(2.5V) makes this ideal for portable euqipment

Equivalent circuit

Drive circuits can be simple

3 Drain

Parallel use is easy

we declare that the material of product

compliance with RoHS requirements.

1 Gate

ORDERING INFORMATION

Device

Marking

Shipping

∗ Gate

Protection

Diode

2 Source

8000/Tape & Reel

L2SK3541MT5G

A pr

otection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in use.

Use a protection circuit when the fixed voltages

are exceeded.

Maximum Ratings and Thermal Characteristics (T_A= 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

± 20

I_D

± 100

Pulsed Drain Current

Total Power Dissipation²⁾

I_DM

P_D

± 400

150

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

1) Pw≤10µs, Duty cycle≤1%

2) With each pin mounted on the recommended lands.

Rev.O 1/4

12 3 4

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