Datasheet > L2SK3018WT1G

L2SK3018WT1G

更新时间： 2024-10-29 01:21:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	317K
描述
N-channel MOSFET 100 mA, 30 V

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技术参数
数据手册

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L2SK3018WT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.77
配置：	Single	最大漏极电流 (Abs) (ID)：	0.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	FET General Purpose Power	表面贴装：	YES

L2SK3018WT1G 数据手册

L2SK3018WT1G

S-L2SK3018WT1G

N-channel MOSFET

100 mA, 30 V

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

SC70(SOT-323)

●

Low on-resistance.

Drain (3)

●

Fast switching speed.

●

Easy to parallel.

●

ESD>500V

●

Low voltage drive (2.5V) makes this device ideal for portable equipment.

Gate(1)

●

Easily designed drive circuits.

Gate

Protection

Diode

∗

2. DEVICE MARKING AND ORDERING INFORMATION

Source(2)

Device

Marking

Shipping

L2SK3018WT1G

L2SK3018WT3G

3000/Tape&Reel

10000/Tape&Reel

Drain

3. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

Limits

Unit

Drain–Source Voltage

±20

Gate

Source

Gate-Source Voltage

VGS

= Device Code

= Month Code

Continuous

±100

±400

200

Drain Current

Pulsed

IDP(Note 1)

PD(Note 2)

Tch

℃

Total power dissipation (TC=25°C)

Channel temperature

150

Storage temperature

Tstg

-55~+150

℃

1.Pw≤10µs, Duty cycle≤1%

2 With each pin mounted on the recommended lands.

Leshan Radio Company, LTD.

Rev.B Jun 2018

1/5

12 3 4 5

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