Datasheet > L2SD2114KVLT1G_11

L2SD2114KVLT1G_11

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	72K
描述
Epitaxial planar type NPN silicon transistor High DC current gain

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L2SD2114KVLT1G_11 数据手册

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LESHAN RADIO COMPANY, LTD.

Epitaxial planar type

NPN silicon transistor

L2SD2114KVLT1G Series

zFeatures

1) High DC current gain.

h^FE= 1200 (Typ.)

2) High emitter-base voltage.

V^EBO=12V (Min.)

3) Low V_{CE (sat).}

VCE (sat) = 0.18V (Typ.)

(I^C/ I^B= 500mA / 20mA)

SOT– 23 (TO–236AB)

4) We declare that the material of product compliance with RoHS requirements.

COLLECTOR

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_CBO

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

BASE

VCEO

EBO

EMITTER

0.5

A(DC)

A(Pulse)

Collector current

∗

Collector power

dissipation

0.2

Junction temperature

Storage temperature

150

°C

Tstg

−55∼+150

Single pulse Pw=100ms

∗

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^CEO

BV^EBO

−

=10µA

=1mA

−

=10µA

^CB=20V

^EB=10V

CBO

EBO

CE(sat)

−

0.5

0.4

µA

Emitter cutoff current

−

Collector-emitter saturation voltage

−

0.18

=500mA/20mA

−

DC current transfer ratio

−

2700

^CE=3V, I

=10mA

820

∗

Cob

Ron

Transition frequency

Output capacitance

Output On-resistance

−

350

8.0

0.8

−

MHz

^CE=10V, I

^CB=10V, I

=1mA, Vi=100mV(rms), f=1kHz

=−50mA, f=100MHz

=0A, f=1MHz

Measured using pulse current

∗

^ƽh_FEValues Classification, Device Marking and Ordering Information

h_FE

Device

Marking

Shipping

L2SD2114KVLT1G

820~1800

3000/Tape&Reel

L2SD2114KVLT3G

L2SD2114KWLT1G

L2SD2114KWLT3G

820~1800

1200~2700

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

Rev.O 1/4

12 3 4

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