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L2SD2114KVLT1G PDF预览

L2SD2114KVLT1G

更新时间: 2024-10-28 11:36:27
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 78K
描述
Epitaxial planar type NPN silicon transistor

L2SD2114KVLT1G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
最大集电极电流 (IC):0.5 A配置:Single
最小直流电流增益 (hFE):820最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

L2SD2114KVLT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
Epitaxial planar type  
NPN silicon transistor  
L2SD2114K*LT1  
zFeatures  
1) High DC current gain.  
hFE = 1200 (Typ.)  
3
2) High emitter-base voltage.  
VEBO =12V (Min.)  
3) Low VCE (sat).  
1
2
VCE (sat) = 0.18V (Typ.)  
(IC / IB = 500mA / 20mA)  
SOT– 23 (TO–236AB)  
4) Pb-Free package is available.  
COLLECTOR  
3
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
25  
Unit  
1
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
V
BASE  
20  
2
12  
V
EMITTER  
0.5  
1
A(DC)  
A(Pulse)  
Collector current  
IC  
Collector power  
dissipation  
P
C
0.2  
W
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55∼+150  
Single pulse Pw=100ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
25  
20  
12  
I
I
I
C
=10µA  
=1mA  
V
C
V
E
=10µA  
CB=20V  
EB=10V  
I
CBO  
0.5  
0.5  
0.4  
µA  
µA  
V
V
V
Emitter cutoff current  
I
EBO  
Collector-emitter saturation voltage  
VCE(sat)  
0.18  
I
C/I  
B
=500mA/20mA  
DC current transfer ratio  
hFE  
2700  
V
CE=3V, I  
C=10mA  
820  
Cob  
Transition frequency  
Output capacitance  
Output On-resistance  
f
T
350  
8.0  
0.8  
MHz  
pF  
V
CE=10V, I  
CB=10V, I  
=1mA, Vi=100mV(rms), f=1kHz  
E
=−50mA, f=100MHz  
V
E
=0A, f=1MHz  
Ron  
pF  
IB  
Measured using pulse current  
ƽhFE Values Classification, Device Marking and Ordering Information  
hFE  
Device  
Marking  
BV  
Shipping  
L2SD2114KVLT1  
820~1800  
3000/Tape&Reel  
BV  
(Pb-Free)  
L2SD2114KVLT1G  
L2SD2114KWLT1  
L2SD2114KWLT1G  
820~1800  
1200~2700  
1200~2700  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
BW  
BW  
(Pb-Free)  
L2SD2114K*LT1–1/4  

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