生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.8 A | 配置: | Single |
最小直流电流增益 (hFE): | 180 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
L2SD1781KRLT1G | LRC |
获取价格 |
Medium Power Transistor(32V, 0.8A) | |
L2SD1781KRLT3G | LRC |
获取价格 |
Medium Power Transistor (32V, 0.8A) High current capacity in compact | |
L2SD2114KLT1 | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor | |
L2SD2114KVLT1 | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor | |
L2SD2114KVLT1G | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor | |
L2SD2114KVLT1G_11 | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor High DC current gain | |
L2SD2114KVLT3G | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor High DC current gain | |
L2SD2114KWLT1 | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor | |
L2SD2114KWLT1G | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor | |
L2SD2114KWLT3G | LRC |
获取价格 |
Epitaxial planar type NPN silicon transistor High DC current gain |