Datasheet > L2SD1781KQLT1G_11

L2SD1781KQLT1G_11

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	115K
描述
Medium Power Transistor (32V, 0.8A) High current capacity in compact

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L2SD1781KQLT1G_11 数据手册

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LESHAN RADIO COMPANY, LTD.

Medium Power Transistor

(32V, 0.8A)

L2SD1781KQLT1G Series

L2SD1781KQLT1G

FFeatures

CE(sat)

1) Very low V

V^CE(sat)t 0.4 V (Typ.)

(I / I = 500mA / 50mA)

2) High current capacity in compact

package.

SOT-23 /TO-236AB

3) Complements the L2SB1197KXLT1G

We declare that the material of product compliance with RoHS requirements.

FStructure

Epitaxial planar type

NPN silicon transistor

COLLECTOR

FAbsolute maximum ratings (Ta = 25_C)

BASE

EMITTER

ORDERING INFORMATION

Device

Marking

Shipping

L2SD1781KQLT1G

L2SD1781KQLT3G

L2SD1781KRLT1G

L2SD1781KRLT3G

AFQ

3000 Tape & Reel

10000 Tape & Reel

3000 Tape & Reel

10000 Tape & Reel

AFQ

AFR

Rev.O 1/4

12 3 4

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