Datasheet > L2SC5658RM3T5G

L2SC5658RM3T5G

更新时间： 2024-10-29 01:12:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	336K
描述
NPN Silicon General Purpose Amplifier Transistor

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L2SC5658RM3T5G 数据手册

LESHAN RADIO COMPANY, LTD.

L2SC5658QM3T5G

L2SC5658RM3T5G

NPN Silicon General

Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-723 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

• Reduces Board Space

SOT –723

• High h , 210−460 (typical)

• Low V

, < 0.5 V

CE(sat)

• ESD Performance: Human Body Model; u 2000 V,

COLLECTOR

Machine Model; u 200 V

• Available in 8 mm, 7-inch/3000 Unit Tape and Reel

• These are Pb−Free Devices

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

Unit

Vdc

BASE

EMITTER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

MARKING

DIAGRAM

5.0

Vdc

Collector Current − Continuous

THERMAL CHARACTERISTICS

Rating

100

mAdc

XXM

SOT−723

Symbol

Max

260

Unit

°C

Power Dissipation (Note 1)

Junction Temperature

XX = Specific Device Code

(QM = L2SC5658QM3T5G

RM = L2SC5658RM3T5G)

150

Storage Temperature Range

stg

−55 ~ +150

°C

= Date Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

ORDERING INFORMATION

Device

Package

Shipping

−723 8000/Tape & Reel

L2SC5658QM3T5G SOT

(Pb−Free)

Rev.O 1/5

12 3 4 5

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