Datasheet > L2SC5635WT3G

L2SC5635WT3G

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管
页数	文件大小	规格书
3页	2203K
描述
High-Frequency Amplifier Transistor Can operate at low voltage

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

L2SC5635WT3G 数据手册

LESHAN RADIO COMPANY, LTD.

High-FrequencyAmplifier

Transistor

L2SC5635WT1G

z Features

1.High gain bandwidth product.(Typ.f_T=8.0GHz)

2.High gain,low noise

3.Can operate at low voltage

4.We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-base voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

SC-70

COLLECTOR

1.5

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

125

BASE

T_stg

-55~+125

°C

EMITTER

DEVICE MARKING

L2SC5635WT1G=HF1

ORDERING INFORMATION

Shipping

Device

Package

SC-70

3000/Tape & Reel

10000/Tape & Reel

L2SC5635WT1G

L2SC5635WT3G

ELECTRICAL CHARACTERISTICS(T_A=25°C)

Parameter

Symbol

I_CBO

Min.

Typ

Max.

1.0

250

Unit

µA

Conditions

I =0mA

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

V_CB=10V,

V_EB=1V,

V_CE=5V,

I_EBO

µA

I_C=0mA

h_FE

5.0

_C=10mA

Transition frequency

Output capacitance

Insertion power gain

Noise factor

f_T

8.0

1.0

GHz

V_CE=5V, I_E=10mA

Cob

V_CB=5V, I_E=0A, f=1MHz

=5V, I_C=10A, f=1GHz

V_CE

V_CE=5V, I_C=5mA, f=1GHz

9.0

12.0

1.4

S₂₁

Rev.O 1/3

12 3

中文翻译

下载PDF

与L2SC5635WT3G相关器件

型号	品牌	获取价格	描述	数据表
L2SC5658M3T5G	LRC	获取价格	General Purpose Amplifier NPN Silicon Transistor
L2SC5658QM3T5G	LRC	获取价格	NPN Silicon General Purpose Amplifier Transistor
L2SC5658QM3T5G_15	LRC	获取价格	NPN Silicon General Purpose Amplifier Transistor
L2SC5658RM3T5G	LRC	获取价格	NPN Silicon General Purpose Amplifier Transistor
L2SD1781KLT1	LRC	获取价格	Medium Power Transistor(32V, 0.8A)
L2SD1781KQLT1	LRC	获取价格	Medium Power Transistor(32V, 0.8A)
L2SD1781KQLT1G	LRC	获取价格	Medium Power Transistor(32V, 0.8A)
L2SD1781KQLT1G_11	LRC	获取价格	Medium Power Transistor (32V, 0.8A) High current capacity in compact
L2SD1781KQLT3G	LRC	获取价格	Medium Power Transistor (32V, 0.8A) High current capacity in compact
L2SD1781KRLT1	LRC	获取价格	Medium Power Transistor(32V, 0.8A)