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L2SC5343SLT1G PDF预览

L2SC5343SLT1G

更新时间: 2024-10-29 01:05:07
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 354K
描述
General Purpose Transistors NPN Silicon

L2SC5343SLT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.74最大集电极电流 (IC):0.15 A
配置:Single最小直流电流增益 (hFE):270
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):80 MHz
Base Number Matches:1

L2SC5343SLT1G 数据手册

 浏览型号L2SC5343SLT1G的Datasheet PDF文件第2页浏览型号L2SC5343SLT1G的Datasheet PDF文件第3页浏览型号L2SC5343SLT1G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L2SC5343QLT1G  
Series  
FEATURE  
3
ƽ
Excellent hFE linearity  
:hFE(2)=100(Typ) at VCE=6V,IC=150Ma  
:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ).  
1
2
z Low noise:NF=1Db(Typ).at f=1KHz.  
SOT– 23  
ƽWe declare that the material of product compliance with RoHS requirements.  
DEVICE MARKING AND ORDERING INFORMATION  
COLLECTOR  
3
Device  
Marking  
Shipping  
L2SC5343QLT1G  
7Q  
3000/Tape&Reel  
L2SC5343QLT3G  
L2SC5343RLT1G  
7Q  
7R  
10000/Tape&Reel  
3000/Tape&Reel  
1
BASE  
2
EMITTER  
7R  
7S  
7S  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
L2SC5343RLT3G  
L2SC5343SLT1G  
L2SC5343SLT3G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
50  
V
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
VEBO  
60  
5
V
V
Collector current-continuoun  
Collector current-continuoun  
Collector Dissipation  
IC  
IB  
150  
50  
mA  
mA  
P
C
200  
mW  
Junction and Storage Temperature Tj, Tstg  
-55~150  
Rev.O 1/4  

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