Datasheet > L2SC5343QLT3G

L2SC5343QLT3G

更新时间： 2024-10-29 01:05:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	354K
描述
General Purpose Transistors NPN Silicon

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数据手册

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L2SC5343QLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

L2SC5343QLT1G

Series

FEATURE

Excellent h_FElinearity

:h_FE(2)=100(Typ) at V_CE=6V,I_C=150Ma

:h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ).

z Low noise:NF=1Db(Typ).at f=1KHz.

SOT– 23

ƽWe declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

COLLECTOR

Device

Marking

Shipping

L2SC5343QLT1G

3000/Tape&Reel

L2SC5343QLT3G

L2SC5343RLT1G

10000/Tape&Reel

3000/Tape&Reel

BASE

EMITTER

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

L2SC5343RLT3G

L2SC5343SLT1G

L2SC5343SLT3G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector current-continuoun

Collector Dissipation

I_C

I_B

150

200

Junction and Storage Temperature T_j,T_stg

℃

-55~150

Rev.O 1/4

12 3 4

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