Datasheet > L2SC4617T1

L2SC4617T1

更新时间： 2024-10-28 03:49:35

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	218K
描述
General Purpose Transistors NPN Silicon

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

L2SC4617T1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

COLLECTOR

L2SC4617*T1

BASE

EMITTER

SC-89

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

0.15

Collector power

dissipation

0.15

150

˚C

Junction temperature

Storage temperature

Tstg

−

55~+150

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−

50µA

Collector-emitter breakdown voltage BVCEO

1µA

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

50µA

CBO

EBO

CE(sat)

−

0.1

0.5

560

−

µA

CB=60V

Emitter cutoff current

−

EB=7V

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

−

C/I

50mA/5mA

120

−

6V, I 1mA

180

2.0

MHz

12V, I

2mA, f

=30MHz

Output capacitance

Cob

−

3.5

0A, f 1MHz

!Device marking

L2SC4617QT1=BQ L2SC4617RT1=BR L2SC4617ST1=BS

h^FEvalues are classified as follows:

Item

hFE

120~270

180~390

270~560

L2SC4617*T1-1/4

12 3 4

中文翻译

下载PDF

与L2SC4617T1相关器件

型号	品牌	获取价格	描述	数据表
L2SC4617XT1G	LRC	获取价格	General Purpose Transistors
L2SC5343QLT1G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5343QLT3G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5343RLT1G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5343RLT3G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5343SLT1G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5343SLT3G	LRC	获取价格	General Purpose Transistors NPN Silicon
L2SC5635LT1G	LRC	获取价格	High-Frequency Amplifier Transistor High gain,low noise
L2SC5635LT3G	LRC	获取价格	High-Frequency Amplifier Transistor High gain,low noise
L2SC5635WT1G	LRC	获取价格	High-Frequency Amplifier Transistor Can operate at low voltage