Datasheet > L2SC4617RLT1G

L2SC4617RLT1G

更新时间： 2024-10-29 02:50:27

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
4页	468K
描述
general purpose transistors NPN Silicon

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L2SC4617RLT1G 数据手册

Series

L2SC4617RLT1G

general purpose transistors NPN Silicon

NPN Silicon

z We declare that the material of product compliance with RoHS requirements.

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

CBO

CEO

EBO

I_C

0.15

SC-89

Collector power

dissipation

0.15

Tstg

150

˚C

Junction temperature

Storage temperature

−

55~+150

COLLECTOR

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

BV^CBO

−

50µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage BV

CEO

1µA

BASE

BV^EBO

−

50µA

Emitter-base breakdown voltage

Collector cutoff current

EMITTER

CBO

EBO

−

0.1

0.5

560

−

µA

60V

^EB=7

/I 50mA/5mA

6V, I 1mA

−

Emitter cutoff current

CE(sat)

−

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

120

−

180

2.0

MHz

12V, I

E=2mA, f=30MHz

Cob

−

3.5

0A, f 1MHz

Output capacitance

!Device marking

L2SC4617QT1G=BQ L2SC4617RT1G=BR L2SC4617ST1G=BS

h^FEvalues are classified as follows:

Item

120~270

180~390

270~560

ORDERING INFORMATION

Device

Marking

Shipping

L2SC4617QT1G

L2SC4617QT3G

L2SC4617RT1G

3000 Tape & Reel

10000 Tape & Reel

3000 Tape & Reel

10000 Tape & Reel

3000 Tape & Reel

10000 Tape & Reel

L2SC4617RT3G

L2SC4617ST1G

L2SC4617ST3G

1/4

Rev :01.06.2017

www.leiditech.com

12 3 4

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