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L2SC4226QT1 PDF预览

L2SC4226QT1

更新时间: 2024-10-28 03:06:35
品牌 Logo 应用领域
乐山 - LRC 晶体放大器晶体管
页数 文件大小 规格书
5页 141K
描述
High-Frequency Amplifier Transistor

L2SC4226QT1 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):125
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):3000 MHz

L2SC4226QT1 数据手册

 浏览型号L2SC4226QT1的Datasheet PDF文件第2页浏览型号L2SC4226QT1的Datasheet PDF文件第3页浏览型号L2SC4226QT1的Datasheet PDF文件第4页浏览型号L2SC4226QT1的Datasheet PDF文件第5页 
LESHAN RADIO COMPANY, LTD.  
L2SC4226QT1  
3
1
2
SC-70/SOT-323  
DESCRIPTION  
The L2SC4226QT1 is a low supply voltage transistor designed for VHF, U  
HF low noise amplifier.  
It is suitable for a high density surface mount assembly since the transistor  
has been applied small mini mold package.  
FEATURES  
Low Noise  
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
High Gain  
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
Small Mini Mold Package  
EIAJ: SC-70  
L2SC4226QT1-1/5  

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