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L2SC4081ST1G PDF预览

L2SC4081ST1G

更新时间: 2024-10-28 03:49:35
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
5页 131K
描述
General Purpose Transistors NPN Silicon

L2SC4081ST1G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.82
最大集电极电流 (IC):0.15 A配置:Single
最小直流电流增益 (hFE):270最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES

L2SC4081ST1G 数据手册

 浏览型号L2SC4081ST1G的Datasheet PDF文件第2页浏览型号L2SC4081ST1G的Datasheet PDF文件第3页浏览型号L2SC4081ST1G的Datasheet PDF文件第4页浏览型号L2SC4081ST1G的Datasheet PDF文件第5页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L2SC4081*T1  
FEATURE  
ƽLow Cob,Cob=2pF(Typ.).  
ƽEpitaxial planar type.  
ƽPNP complement:L2SA1576A  
ƽPb-Free Package is available.  
3
1
2
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
SC-70/SOT– 323  
L2SC4081QT1  
BQ  
3000/Tape&Reel  
BQ  
(Pb-Free)  
L2SC4081QT1G  
L2SC4081RT1  
L2SC4081RT1G  
L2SC4081ST1  
L2SC4081ST1G  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3
COLLECTOR  
BR  
BR  
(Pb-Free)  
1
BASE  
BS  
2
BS  
(Pb-Free)  
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
50  
Unit  
V
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Collector power dissipation  
Junction temperature  
Storage temperature  
60  
V
7.0  
V
150  
0.2  
mAdc  
W
P C  
T j  
150  
°C  
T stg  
-
55  
~
+150  
°C  
hFE  
values are classified as follows:  
Q
R
S
*
hFE  
120~270  
180~390  
270~560  
L2SC4081*T1–1/5  

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