Datasheet > L2SC3838LT1G

L2SC3838LT1G

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管
页数	文件大小	规格书
2页	70K
描述
High-Frequency Amplifier Transistor Small rbb Cc and high gain.

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L2SC3838LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

High-FrequencyAmplifier

Transistor

L2SC3838LT1G

z Features

1.High transition frequency.(Typ.f_T=3.2GHz)

2.Small rbb`Cc and high gain.(Typ.4ps)

3.Small NF.

4.We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-base voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

SOT-23

COLLECTOR

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.2

T_j

150

-55~+150

°C

BASE

T_stg

EMITTER

DEVICE MARKING

L2SC3838LT1G=AD

ORDERING INFORMATION

Shipping

Device

Package

SOT-23

3000/Tape & Reel

10000/Tape & Reel

L2SC3838LT1G

L2SC3838LT3G

ELECTRICAL CHARACTERISTICS(T_A=25°C)

Parameter

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

I_C=10µA

I_C=1mA

I_E=10µA

1.4

0.5

180

µA

V_CB=10V

Emitter cutoff current

I_EBO

V_EB=2V

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

V_CE(sat)

h_FE

I_C/I_B=10mA/5mA

V_CE/I_C=10V/5mA

V_CE=10V, I_E=-10mA, f=500MHz

V_CB=10V, I_E=0A, f=1MHz

V_CB=10V, I_C=10mA, f=31.8MHz

V_CE=6V, I_C=2mA, f=500MHz,Rg=50Ω

f_T

3.2

0.8

GHz

Output capacitance

Cob

1.5

Collector-base time constant

Noise factor

rbb`Cc

3.5

Rev.O 1/2

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