Datasheet > L2SC3837QLT1G

L2SC3837QLT1G

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管
页数	文件大小	规格书
2页	71K
描述
High-Frequency Amplifier Transistor Small rbb Cc and high gain.

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技术参数
数据手册

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L2SC3837QLT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	600 MHz
Base Number Matches：	1

L2SC3837QLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

High-FrequencyAmplifier

Transistor

L2SC3837QLT1G

z Features

1.High transition frequency.(Typ.f_T=1.5GHz)

2.Small rbb`Cc and high gain.(Typ.6ps)

3.Small NF.

4.We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-base voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

SOT-23

COLLECTOR

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.2

T_j

150

-55~+150

°C

BASE

T_stg

EMITTER

DEVICE MARKING

L2SC3837QLT1G=AQ

ORDERING INFORMATION

Shipping

Device

Package

SOT-23

3000/Tape & Reel

10000/Tape & Reel

L2SC3837QLT1G

L2SC3837QLT3G

ELECTRICAL CHARACTERISTICS(T_A=25°C)

Parameter

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

I_C=10µA

I_C=1mA

I_E=10µA

120

600

0.5

270

µA

V_CB=10V

Emitter cutoff current

I_EBO

V_EB=2V

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

V_CE(sat)

h_FE

I_C/I_B=20mA/4mA

V_CE/I_C=10V/10mA

V_CB=10V, I_C=10mA, f=200MHz

V_CB=10V, I_E=0A, f=1MHz

V_CB=10V, I_C=10mA, f=31.8MHz

V_CE=12V, I_C=2mA, f=200MHz,Rg=50Ω

f_T

1500

0.9

MHz

Output capacitance

Cob

1.5

Collector-base time constant

Noise factor

rbb`Cc

4.5

Rev.O 1/2

中文翻译

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