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L2SC3356LT1G PDF预览

L2SC3356LT1G

更新时间: 2024-10-28 03:49:35
品牌 Logo 应用领域
乐山 - LRC 晶体放大器晶体管
页数 文件大小 规格书
6页 391K
描述
High-Frequency Amplifier Transistor

L2SC3356LT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):82最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES

L2SC3356LT1G 数据手册

 浏览型号L2SC3356LT1G的Datasheet PDF文件第2页浏览型号L2SC3356LT1G的Datasheet PDF文件第3页浏览型号L2SC3356LT1G的Datasheet PDF文件第4页浏览型号L2SC3356LT1G的Datasheet PDF文件第5页浏览型号L2SC3356LT1G的Datasheet PDF文件第6页 
LESHAN RADIO COMPANY, LTD.  
DESCRIPTION  
L2SC3356LT1G  
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for  
low noise amplifier at VHF, UHF and CATV band.  
It has dynamic range and good current characteristic.  
3
ORDERING INFORMATION  
1
2
Shipping  
Device  
Marking  
R24  
SOT-23  
3000/Tape & Reel  
10000/Tape & Reel  
L2SC3356LT1G  
L2SC3356LT3G  
R24  
FEATURES  
• We declare that the material of product compliance with RoHS requirements.  
Low Noise and High Gain  
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
High Power Gain  
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
12  
V
V
3.0  
V
100  
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
Tj  
150  
Tstg  
65 to +150  
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
A
TEST CONDITIONS  
VCB = 10 V, IE = 0  
ICBO  
1.0  
1.0  
270  
IEBO  
A
VEB = 1.0 V, IC = 0  
hFE  
82  
170  
7
VCE = 10 V, IC = 20 mA  
Gain Bandwidth Product  
Feed-Back Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
GHz  
pF  
VCE = 10 V, IC = 20 mA  
Cre**  
0.55  
11.5  
1.1  
1.0  
2.0  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
2
S21e  
dB  
NF  
dB  
*
Pulse Measurement PW 350 s, Duty Cycle 2 %  
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.  
Driver Marking  
L2SC3356LT1G=R24  
1/4  

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