Datasheet > L2SC3356LT1

L2SC3356LT1

更新时间： 2024-10-28 03:49:35

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管
页数	文件大小	规格书
4页	135K
描述
High-Frequency Amplifier Transistor

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数据手册

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L2SC3356LT1 数据手册

DATA SHEET

LESHAN RADIO COMPANY, LTD.

L2SC3356LT1

DESCRIPTION

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

SOT-23

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 11 dB TYP. @V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

High Power Gain

•

MAG = 13 dB TYP. @V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

100

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

T^j

150

T^stg

65 to +150

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

270

I^EBO

V^EB= 1.0 V, I^C= 0

h^F^E

170

V^CE= 10 V, I^C= 20 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Noise Figure

f^T

GHz

V^CE= 10 V, I^C= 20 mA

C^re**

0.55

11.5

1.1

1.0

2.0

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

S²¹e

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

Driver Marking

L2SC3356LT1=R24

L2SC3356LT1-1/4

12 3 4

中文翻译

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