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L2SC2412KSLT1 PDF预览

L2SC2412KSLT1

更新时间: 2024-10-28 02:57:11
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 100K
描述
General Purpose Transistors NPN Silicon

L2SC2412KSLT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):0.15 A配置:Single
最小直流电流增益 (hFE):270最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

L2SC2412KSLT1 数据手册

 浏览型号L2SC2412KSLT1的Datasheet PDF文件第2页浏览型号L2SC2412KSLT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L2SC2412K*LT1  
Pb−Free Package is Available.  
3
COLLECTOR  
3
1
BASE  
1
2
2
EMITTER  
SOT– 23  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
50  
Unit  
V
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Collector power dissipation  
Junction temperature  
Storage temperature  
ORDERING INFORMATION  
60  
V
Device  
Marking  
Shipping  
7.0  
V
L2SC2412KQLT1  
L2SC2412KQLT1G  
L2SC2412KRLT1  
L2SC2412KRLT1G  
L2SC2412KSLT1  
L2SC2412KSLT1G  
BQ  
3000 Tape & Reel  
150  
0.2  
mAdc  
W
BQ(Pb-Free) 3000 Tape & Reel  
P C  
3000 Tape & Reel  
BR  
T j  
150  
°C  
BR(Pb-Free) 3000 Tape & Reel  
T stg  
-55  
~
+150  
°C  
3000 Tape & Reel  
G1F  
G1F(Pb-Free)  
DEVICE MARKING  
3000 Tape & Reel  
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
(IC = 1 mA)  
V (BR)CEO  
50  
V
V
Emitter–Base Breakdown Voltage  
(IE = 50 µA)  
Collector–Base Breakdown Voltage  
(IC = 50 µA)  
Collector Cutoff Current  
(VCB = 60 V)  
V (BR)EBO  
V (BR)CBO  
I CBO  
7
60  
V
0.1  
0.1  
µA  
µA  
Emitter cutoff current  
I EBO  
(VEB = 7 V)  
Collector-emitter saturation voltage  
(IC/ IB = 50 mA / 5m A)  
DC current transfer ratio  
(V CE = 6 V, I C= 1mA)  
Transition frequency  
V CE(sat)  
h FE  
0.4  
V
120  
––  
560  
––  
f T  
180  
2.0  
––  
MHz  
pF  
(V CE = 12 V, I E= – 2mA, f =30MHz )  
Output capacitance  
C ob  
3.5  
(V CB = 12 V, I E= 0A, f =1MHz )  
h FE values are classified as follows:  
Q
R
S
*
hFE  
120~270  
180~390  
270~560  
L2SC2412K*LT1-1/3  

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