Datasheet > L2SB772P

L2SB772P

更新时间： 2024-10-29 01:18:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
2页	137K
描述
PNP SURFACE MOUNT TRANSISTOR

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L2SB772P 数据手册

LESHAN RADIO COMPANY, LTD.

PNP SURFACE MOUNT TRANSISTOR

L2SB772Q

L2SB772P

We declare that the material of product compliance with RoHS requirements.

ꢀ

DEVICE MARKING AND ORDERING INFORMATION

SOT-89

Device

Marking

Shipping

L2SB772Q

72Q

2500/Tape&Reel

2,4

2500/Tape&Reel

L2SB772P

72P

COLLECTOR

MAXIMUM RATINGS(Ta=25qC)

BASE

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

VCEO

VEBO

−40

−30

EMITTER

−6

Peak Pulse Current

−3

Collector power dissipation

Junction temperature

Storage temperature

0.5

°C

150

Tstg

−55 to 150

ELECTRICAL CHARACTERISTICS(Ta=25qC)

Parameter

Symbol Min.

Typ.

Max.

Unit

Conditions

BV^CBO

BV^CEO

BV^EBO

−40

−30

−6

−

= −100

= −10mA

= −100

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

CBO

−

−1

^CB= −40V

^CB= −30V

^EB= −6V

CEO

EBO

−

−10

−1

Collector cutoff current

Emitter cutoff current

CE(sat)

BE(sat)

−

−0.5

−1.5

320

= −2A/−0.2A

Collector-emitter saturation voltage

Base-emitter saturation voltage

−

C B

FE(1)

100

^CE= −2V, I

^CE= −5V, I

= −1A

DC current transfer ratio

Transition frequency

−

= −100mA

MHz

=-0.1A, f =10MHz

h_FE(1)values are classified as follows :

Item(*)

h_FE

100~200

160~320

Rev.O 1/2

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