Datasheet > L2SA812RLT1

L2SA812RLT1

更新时间： 2024-10-28 11:36:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
5页	149K
描述
General Purpose Transistors

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数据手册

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L2SA812RLT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

FEATURE

ƽHigh Voltage: V_CEO= -50 V.

L2SA812*LT1

ƽEpitaxial planar type.

ƽNPN complement: L2SC1623

ƽPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

SOT-23

3000/Tape&Reel

L2SA812QLT1

(Pb-Free)

3000/Tape&Reel

L2SA812QLT1G

L2SA812RLT1

L2SA812RLT1G

L2SA812SLT1

L2SA812SLT1G

COLLECTOR

(Pb-Free)

BASE

(Pb-Free)

EMITTER

MAXIMUM RATINGS

Symbol

L2SA812

Unit

Rating

Collector-Emitter Voltage

V_CEO

-50

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

I^C

-60

-6

Collector current-continuoun

-150

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Characteristic

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

200

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

556

θJA

P_D

Total Device Dissipation

Alumina Substrate, (2) TA=25 ^oC

Derate above 25^oC

200

2.4

mW/^oC

^oC/W

^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

θJA

Tj ,Tstg

-55 to +150

L2SA812-1/5

12 3 4 5

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