Datasheet > L2SA2029QM3T5G_15

L2SA2029QM3T5G_15

更新时间： 2024-10-29 01:12:47

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	296K
描述
PNP Silicon General Purpose Amplifier Transistor

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LESHAN RADIO COMPANY, LTD.

PNP Silicon General

Purpose Amplifier Transistor

L2SA2029QM3T5G

L2SA2029RM3T5G

This PNP transistor is designed for general purpose amplifier

applications. This device is housed in the SOT−723 package which is

designed for low power surface mount applications, where board

space is at a premium.

• ^{Reduces Board Space}

• High h , 210−460 (Typical)

• ^{Low V}

, < 0.5 V

CE(sat)

• ESD Performance: Human Body Model; u 2000 V,

SOT –723

Machine Model; u 200 V

• Available in 4 mm, 8000 Unit Tape & Reel

COLLECTOR

• This is a Pb−Free Device

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

−60

Unit

Vdc

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

−50

Vdc

BASE

EMITTER

−6.0

−100

Vdc

Collector Current − Continuous

mAdc

MARKING

DIAGRAM

THERMAL CHARACTERISTICS

Rating

Symbol

Max

265

Unit

°C

XXM

SOT−723

Power Dissipation (Note 1)

Junction Temperature

150

Storage Temperature Range

stg

−55 ~ +150

°C

XX = Specific Device Code

(FQ = L2SA2029QM3T5G

FR = L2SA2029RM3T5G)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR−4 glass epoxy printed circuit board using the

minimum recommended footprint.

= Date Code

ORDERING INFORMATION

Device

Package

Shipping

−723 8000/Tape & Reel

L2SA2029QM3T5G SOT

(Pb−Free)

Rev.O 1/5

12 3 4 5

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