Datasheet > L2SA1774XT1G

L2SA1774XT1G

更新时间： 2024-10-28 05:41:15

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	202K
描述
General Purpose Transistors

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中文翻译

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数据手册

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L2SA1774XT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

L2SA1774XT1G

We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION

Shipping

Device

Marking

3000/Tape & Reel

10000/Tape & Reel

L2SA1774XT1G

L2SA1774XT3G

SC-89

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−60

Unit

COLLECTOR

VCBO

VCEO

VEBO

−50

−6

−0.15

A (DC)

BASE

EMITTER

Collector power

dissipation

0.15

150

˚C

Junction temperature

Storage temperature

Tstg

−

55~+150

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

BV^CBO

−60

−50

−6

−

−50µA

−1µA

Collector-base breakdown voltage

CEO

Collector-emitter breakdown voltage BV

BV^EBO

−

−50µA

Emitter-base breakdown voltage

Collector cutoff current

CBO

EBO

−

−0.1

−0.5

560

−

µA

−60V

−

=−6V

Emitter cutoff current

CE(sat)

−

−50mA/−5mA

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

120

−

−6V, I −1mA

140

4.0

MHz

−12V, I

2mA, f

30MHz

Cob

−

5.0

0A, f 1MHz

Output capacitance

!Device marking

L2SA1774QT1G=FQ L2SA1774ST1G=FS L2SA1774RT1G=FR

h^FEvalues are classified as follows:

Item

120~270

180~390

270~560

1/3

12 3

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